Author:

Abstract:

© (2013) by SID-the Society for Information Display All rights reserved. In this study, the authors report high-quality amorphous Indium- Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) fabricated using a new back-channel-etch (BCE) process flow on Polyethylene Naphthalate (PEN) foil. The BCE flow allows a better scalability of TFTs for high-resolution backplanes and related circuits. The maximum processing temperature was limited to less than I65ºC in order to ensure good overlay accuracy (< I µm) on foil The presented process flow differs from to previously reported by defining the Mo S/D contacts by diy etch prior to a-IGZO patterning. The TFTs show good electricul performance, including Jield-effect mobilities in the range of 15.0cm2/(V.s), sub-threshold slopes of 0.3V/decade and off-currents <1.0pA on foil. Finally, the applicability of this new BCE process flow was demonstrated for TFT backplane driving a 32 x 32 active-matrix organic light- emitting diode (AMOLED) display.