Silicon Front-End Junction Formation - Physics and Technology, Date: 2004/04/13 - 2004/04/15, Location: San Francisco, CA, USA

Publication date: 2004-01-01
Volume: 810 Pages: 43 - 48
ISSN: 1-55899-760-1
Publisher: Cambridge University Press

SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY

Author:

Lauwers, Anne
Lindsay, Richard ; Henson, Kirklen ; Severi, Simone ; Akheyar, Amal ; Pawlak, Bartek ; de Potter de ten Broeck, Muriel ; Maex, Karen ; Pichler, P ; Claverie, A ; Lindsay, R ; Orlowski, M ; Windl, W

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Ceramics, Physics, Condensed Matter, Engineering, Materials Science, Physics

Abstract:

Making use of SPER (Solid Phase Epitaxial Regrowth) As and B deep source/drain junctions with high activation can be obtained at temperatures below 700°C. However, higher thermal budget is required to regrow and activate the dopants in the poly gates. Low junction leakage and low contact resistance can be obtained for Ni-silicided As and B SPER junctions making use of deep As and B implants. Because of the low thermal budget source/drain junctions obtained by SPER are an attractive alternative to conventional spike annealed junctions for technologies making use of metal gates.