Silicon Front-End Junction Formation - Physics and Technology, Date: 2004/04/13 - 2004/04/15, Location: San Francisco, CA, USA
SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY
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Keywords:
Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Ceramics, Physics, Condensed Matter, Engineering, Materials Science, Physics
Abstract:
Making use of SPER (Solid Phase Epitaxial Regrowth) As and B deep source/drain junctions with high activation can be obtained at temperatures below 700°C. However, higher thermal budget is required to regrow and activate the dopants in the poly gates. Low junction leakage and low contact resistance can be obtained for Ni-silicided As and B SPER junctions making use of deep As and B implants. Because of the low thermal budget source/drain junctions obtained by SPER are an attractive alternative to conventional spike annealed junctions for technologies making use of metal gates.