Materials Research Society Symposium-Proceedings
Publication date:
2000-01-01
Volume:
612
Pages:
D5141 -
D5146
Author:
Donaton, RA
Coenegrachts, Bart ; Sleeckx, Erik ; Schaekers, Marc ; Sophie, Guus ; Matsuki, N ; Bakklanov, MR ; Beyer, Gerald ; Struyf, Herbert ; Vanhaelemeersch, Serge ; Stucchi, Michele ; De Roest, David ; Maex, Karen
Abstract:
AURORA films, which have a Si-O-Si network with-CH3terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 μm.