Characterization and integration in Cu damascene structures of aurora, an in-organic low-k dielectric

Donaton, RA; Coenegrachts, Bart; Sleeckx, Erik; Schaekers, Marc; Sophie, Guus; Matsuki, N; Bakklanov, MR; Beyer, Gerald; Struyf, Herbert; Vanhaelemeersch, Serge; Stucchi, Michele; De Roest, David; Maex, Karen

Characterization and integration in Cu damascene structures of aurora, an in-organic low-k dielectric

Author:

Donaton, RA

Coenegrachts, Bart ; Sleeckx, Erik ; Schaekers, Marc ; Sophie, Guus ; Matsuki, N ; Bakklanov, MR ; Beyer, Gerald ; Struyf, Herbert ; Vanhaelemeersch, Serge ; Stucchi, Michele ; De Roest, David ; Maex, Karen

Abstract:

AURORA films, which have a Si-O-Si network with-CH3terminations, were characterized and integrated into Cu single damascene structures. The relatively low carbon concentration (∼ 20%) and the very small pore size (∼ 0.6 nm) found could be advantageous during integration of AURORA. Integration of AURORA into Cu single damascene structures was successfully achieved. Suitable resist strip processes, which are critical for Si-O-C type materials, were developed, resulting in trenches with satisfactory profiles. After a complete single damascene process, a interline dielectric constant value of 2.7 was found for line spacing down to 0.25 μm.