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Title: Tem investigation of ion-beam synthesized buried fesi2 in (001) silicon
Authors: Tavares, J
Bender, H
Lauwers, A
Maex, Karen
Van Rossum, Marc
Issue Date: 1993
Publisher: Iop publishing ltd
Series Title: Microscopy of semiconducting materials 1993 issue:134 pages:181-184
Abstract: A continuous buried beta-FeSi2 layer is prepared by Ion Beam Synthesis in (100) silicon. The different epitaxial orientation relationships between the silicide and the silicon matrix are studied by HREM and electron diffraction.
ISSN: 0951-3248
Publication status: published
KU Leuven publication type: DI
Appears in Collections:Physics and Astronomy - miscellaneous
Associated Section of ESAT - INSYS, Integrated Systems

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