Microscopy of semiconducting materials 1993
Publication date:
1993-01-01
Pages:
181 -
184
Publisher:
Iop publishing ltd
Author:
Tavares, J
Bender, H ; Lauwers, A ; Maex, Karen ; Van Rossum, Marc ; Cullis, AG ; StatonBevan, AE ; Hutchison, JL
Keywords:
Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Microscopy, Physics, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics
Abstract:
A continuous buried beta-FeSi2 layer is prepared by Ion Beam Synthesis in (100) silicon. The different epitaxial orientation relationships between the silicide and the silicon matrix are studied by HREM and electron diffraction.