Tem investigation of ion-beam synthesized buried fesi2 in (001) silicon

Tavares, J; Bender, H; Lauwers, A; Maex, Karen; Van Rossum, Marc; Cullis, AG; StatonBevan, AE; Hutchison, JL

Tem investigation of ion-beam synthesized buried fesi2 in (001) silicon

Author:

Tavares, J

Bender, H ; Lauwers, A ; Maex, Karen ; Van Rossum, Marc ; Cullis, AG ; StatonBevan, AE ; Hutchison, JL

Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Microscopy, Physics, Multidisciplinary, Physics, Condensed Matter, Materials Science, Physics

Abstract:

A continuous buried beta-FeSi2 layer is prepared by Ion Beam Synthesis in (100) silicon. The different epitaxial orientation relationships between the silicide and the silicon matrix are studied by HREM and electron diffraction.