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International Electronic Device Meeting - IEDM, Date: 2014/12/15 - 2014/12/17, Location: San Francisco, CA USA

Publication date: 2014-01-01
Volume: 2015-February Pages: 164 - 167
Publisher: Institute of Electrical and Electronics Engineers

International Electronic Device Meeting - IEDM

Author:

Zhang, Leqi
Redolfi, Augusto ; Crotti, Davide ; Adelmann, Christoph ; Clima, Sergiu ; Chen, Yang Yin ; Opsomer, Karl ; Subhechha, Subhali ; Wouters, Dirk ; Groeseneken, Guido ; Jurczak, Malgorzata ; Govoreanu, Bogdan ; Cosemans, Stefan ; Richard, Olivier ; Bender, Hugo ; Hendrickx, Paul ; Witters, Thomas ; Hody, Hubert ; Paraschiv, Vasile ; Radu, Iuliana

Keywords:

Science & Technology, Technology, Computer Science, Theory & Methods, Engineering, Electrical & Electronic, Computer Science, Engineering

Abstract:

© 2014 IEEE. An optimized TiN/amorphous-Silicon/TiN (MSM) two-terminal bidirectional selector is proposed for high density RRAM arrays. The devices show superior performance with high drive current exceeding 1MA/cm2 and half-bias nonlinearity of 1500. Excellent reliability is fully demonstrated on 40nm-size crossbar structures, with statistical ability to withstand bipolar cycling of over 106 cycles at drive current conditions and thermal stability of device operation exceeding 3hours at 125°C. Furthermore, for the first time, we address the impact of selector variability in a 1S1R memory array, by including circuit simulations in a Monte Carlo loop and point out the importance of selector variability for the low resistive state and its implications on the read margin and power consumption.