International Electronic Device Meeting - IEDM, Date: 2014/12/15 - 2014/12/17, Location: San Francisco, CA USA
International Electronic Device Meeting - IEDM
Author:
Keywords:
Science & Technology, Technology, Computer Science, Theory & Methods, Engineering, Electrical & Electronic, Computer Science, Engineering
Abstract:
© 2014 IEEE. An optimized TiN/amorphous-Silicon/TiN (MSM) two-terminal bidirectional selector is proposed for high density RRAM arrays. The devices show superior performance with high drive current exceeding 1MA/cm2 and half-bias nonlinearity of 1500. Excellent reliability is fully demonstrated on 40nm-size crossbar structures, with statistical ability to withstand bipolar cycling of over 106 cycles at drive current conditions and thermal stability of device operation exceeding 3hours at 125°C. Furthermore, for the first time, we address the impact of selector variability in a 1S1R memory array, by including circuit simulations in a Monte Carlo loop and point out the importance of selector variability for the low resistive state and its implications on the read margin and power consumption.