|ITEM METADATA RECORD
|Title: ||Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density|
|Authors: ||Sahhaf, Sahar|
Hoffmann, Thomas Y
Groeseneken, Guido #
|Issue Date: ||2010 |
|Series Title: ||IEEE Electron Device Letters vol:31 issue:4 pages:272-274|
|Publication status: ||published|
|KU Leuven publication type: ||IT|
|Appears in Collections:||Electrical Engineering - miscellaneous|
ESAT - MICAS, Microelectronics and Sensors
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