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IEEE Electron Device Letters

Publication date: 2010-01-01
Volume: 31 Pages: 272 - 274
Publisher: Institute of Electrical and Electronics Engineers

Author:

Sahhaf, Sahar
Degraeve, Robin ; Srividya, Vidya ; Kaczer, Ben ; Gealy, Dan ; Horiguchi, Naoto ; Togo, Mitsuhiro ; Hoffmann, Thomas Y ; Groeseneken, Guido

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, As and Ar implantations, initial V-th, trap density, EFFECTIVE WORK FUNCTION, VOLTAGE, DEVICES, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

The change of the energy profile of the initially present HfSiO defects in nMOSFETs after Vth adjustment by As and Ar implantations is investigated. A fundamental correlation between the density of energetically deep traps and the initial Vth is revealed, suggesting that the negative bulk charge in HfSiO controls the Vth. © 2010 IEEE.