Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density

Sahhaf, Sahar; Degraeve, Robin; Srividya, Vidya; Kaczer, Ben; Gealy, Dan; Horiguchi, Naoto; Togo, Mitsuhiro; Hoffmann, Thomas Y; Groeseneken, Guido

doi:10.1109/LED.2010.2040063

Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density

Author:

Sahhaf, Sahar

Degraeve, Robin ; Srividya, Vidya ; Kaczer, Ben ; Gealy, Dan ; Horiguchi, Naoto ; Togo, Mitsuhiro ; Hoffmann, Thomas Y ; Groeseneken, Guido

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, As and Ar implantations, initial V-th, trap density, EFFECTIVE WORK FUNCTION, VOLTAGE, DEVICES, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

The change of the energy profile of the initially present HfSiO defects in nMOSFETs after Vth adjustment by As and Ar implantations is investigated. A fundamental correlation between the density of energetically deep traps and the initial Vth is revealed, suggesting that the negative bulk charge in HfSiO controls the Vth. © 2010 IEEE.