Title: Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
Authors: Sahhaf, Sahar
Degraeve, Robin
Srividya, Vidya
Kaczer, Ben
Gealy, Dan
Horiguchi, Naoto
Togo, Mitsuhiro
Hoffmann, Thomas Y
Groeseneken, Guido #
Issue Date: 2010
Publisher: IEEE
Series Title: IEEE Electron Device Letters vol:31 issue:4 pages:272-274
ISSN: 0741-3106
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Electrical Engineering - miscellaneous
ESAT - MICAS, Microelectronics and Sensors
# (joint) last author

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