IEEE Electron Device Letters
Publication date:
2010-01-01
Volume:
31
Pages:
272 -
274
Publisher:
Institute of Electrical and Electronics Engineers
Author:
Sahhaf, Sahar
Degraeve, Robin ; Srividya, Vidya ; Kaczer, Ben ; Gealy, Dan ; Horiguchi, Naoto ; Togo, Mitsuhiro ; Hoffmann, Thomas Y ; Groeseneken, Guido
Keywords:
Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, As and Ar implantations, initial V-th, trap density, EFFECTIVE WORK FUNCTION, VOLTAGE, DEVICES, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware
Abstract:
The change of the energy profile of the initially present HfSiO defects in nMOSFETs after Vth adjustment by As and Ar implantations is investigated. A fundamental correlation between the density of energetically deep traps and the initial Vth is revealed, suggesting that the negative bulk charge in HfSiO controls the Vth. © 2010 IEEE.