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72nd Annual Device Research Conference - DRC, Date: 2014/01/01 - 2014/01/06, Location: Santa Barbara, CA USA

Publication date: 2014-01-01
Pages: 63 - 64
ISSN: 9781479954056
Publisher: IEEE

72nd Annual Device Research Conference - DRC

Author:

Smets, Quentin
Verhulst, Anne ; Lin, Dennis ; Verreck, Devin ; Merckling, Clement ; El Kazzi, Salim ; Martens, Koen ; Raskin, Jean-Pierre ; Thean, Aaron ; Heyns, Marc

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering

Abstract:

Band-to-band tunneling (BTBT) in bulk group IV and III-V semiconductors is well known [1-2], but BTBT to confined layers is more difficult to calibrate experimentally. The latter occurs in most tunnel-FETs (TFET) and in particular in the promising line-TFETs [3,4]. It is predicted that field-induced quantum confinement (FIQC) and changing density of states near the semiconductor/oxide interface negatively impact the BTBT generation rate [5]. In order to gain insight while avoiding complicated TFET fabrication and analysis, we propose and demonstrate the BTBT MOS-capacitor (MOS-CAP) to characterize the onset and rate of BTBT perpendicular to the gate. © 2014 IEEE.