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11th IEEE Nanotechnology Materials and Devices Conference - NMDC, Date: 2016/01/01 - 2016/01/10, Location: Toulouse France

Publication date: 2016-01-01
ISSN: 9781509043521
Publisher: IEEE

11th IEEE Nanotechnology Materials and Devices Conference - NMDC

Author:

Collaert, Nadine
Veloso, Anabela ; Huynh Bao, Trong ; Yakimets, Dmitry ; Ivanov, Tsvetan ; Ramesh, Siva ; Matagne, Philippe ; Sibaja-Hernandez, Arturo ; Liu, Ziyang ; Merckling, Clement ; Waldron, Niamh ; Thean, Aaron

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Materials Science, Multidisciplinary, Engineering, Science & Technology - Other Topics, Materials Science

Abstract:

© 2016 IEEE. In this work, we will review the advantages and challenges of vertical devices which are seen as possible candidates to continue CMOS scaling. Different integration schemes will be discussed, also addressing the use of novel channel materials like III-V that could benefit from a vertical architecture to relax both gate length and wire diameter. Next to that, layout efficiency and the benefits of vertical MOSFETs for SRAM will be highlighted.