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IEEE International Electron Devices Meeting - IEDM, Date: 2009/12/07 - 2009/12/07, Location: Baltimore, MD USA

Publication date: 2009-12-01
Pages: 143 - 146
ISSN: 978-1-4244-5639-0
Publisher: Institute of Electrical and Electronics Engineers

Proceedings of the IEEE International Electron Devices Meeting - IEDM

Author:

Derluyn, Joff
Van Hove, Marleen ; Visalli, Domenica ; Lorenz, Anne ; Marcon, Denis ; Srivastava, Puneet ; Geens, Karen ; Sijmus, Bram ; Viaene, John ; Kang, Xuanwu ; Das, Jo ; Medjdoub, Farid ; Cheng, Kai ; Degroote, Stefan ; Leys, Maarten ; Borghs, Gustaaf ; Germain, Marianne

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, TRANSISTOR, VOLTAGE

Abstract:

We describe the fabrication and characteristics of high voltage enhancement mode SiN/AlGaN/GaN/AlGaN double heterostructure FET devices. The Si 3N4 not only acts as a passivation layer but is crucial in the device concept as it acts as an electron donating layer (1). By selective removal under the gate of the in-situ SiN, we realize e-mode operation with a very narrow threshold voltage distribution with an average value of +475 mV and a standard deviation of only 15 mV. Compared to the reference depletion mode devices, we see no impact of the e-mode architecture on the breakdown behaviour. The devices maintain very low leakage currents even at drain biases up to 80% of the breakdown voltage. © 2009 IEEE.