Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Nanoscience & Nanotechnology, Optics, Physics, Applied, Engineering, Science & Technology - Other Topics, Physics, low-k, single damascene, Zirkon (TM) LK2000, 0204 Condensed Matter Physics, 0299 Other Physical Sciences, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware, 4016 Materials engineering

Abstract:

Zirkon™ LK2000 version 1 dielectric film (Zirkon™ is a trademark of Shipley Company L.L.C), a porous methylsilsesquioxane (MSQ)-based spin-on dielectric with a k value targeted at 2.0, has been integrated in single damascene structures. For patterning, a dual SiC/SiO2 CVD hard-mask was used. Surface treatments (DUV ozone (DUV-O3), plasma treatments) were tested to solve the adhesion issues encountered at the CVD hard-mask and the low-k interface. Adhesion is only improved when plasma treatments are used. Analyses (FTIR, TDS, nano-indentation) show that the plasma treatments only modify the low-k surface. For integration, a plasma treatment (He, NH3, N2/O2) prior to deposition of the CVD hard-mask was included. After patterning, copper metallization and CMP of the wafers, electrical evaluation shows that, compared to the reference wafer (no plasma treatment), plasma-treated wafers have a higher yield and a lower sheet resistance. The RC delay is slightly higher for the plasma-treated wafers than for the reference wafer. © 2003 Elsevier B.V. All rights reserved.