Download PDF (external access)

Journal of Materials Research

Publication date: 1998-01-01
Volume: 13 Pages: 2763 - 2764
Publisher: Published for the Materials Research Society by the American Institute of Physics

Author:

Slaoui, A
Monna, R ; Poortmans, Jef ; Vermeulen, Tom ; Evrard, Olivier ; Said, Khalid ; Nijs, Johan

Keywords:

Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, LIQUID-PHASE EPITAXY, SOLAR-CELLS, POLYCRYSTALLINE SILICON, SOLUTION GROWTH, SI, GLASS, EFFICIENCY, HYDROGEN, LAYERS, 0204 Condensed Matter Physics, 0912 Materials Engineering, 0913 Mechanical Engineering, Materials, 4016 Materials engineering, 4017 Mechanical engineering, 5104 Condensed matter physics

Abstract:

In this paper we review the achievements in the field of silicon crystalline thin film solar cells and correlate these with the different types of growth techniques and substrates. As a starting point we discuss the characteristics of photovoltaic devices based on the use of highly doped monocrystalline substrates as mechanical carriers for the thin films. These films are epitaxially deposited from the gas (CVD) or liquid phase (LPE). The comparison of both techniques is extended to growth on defective silicon substrates, i.e., multicrystalline wafers or silicon ribbons. The intrinsic grain boundary recombination activity in the thin films is assessed as a function of the deposition technique. Bulk passivation by hydrogenation considerably improves the recombination properties. The optimization of the hydrogen passivation conditions is looked at in conjunction with the used surface passivation process. This review is completed with the approaches to realize thin film cells on nonsilicon substrates, including recrystallization in solid and liquid phases.