Noise in Physical Systems and 1/f Fluctuations: Proceedings of the 14th International Conference;, Date: 1997/07/14 - 1997/07/18, Location: BELGIUM, LOUVAIN
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE
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Keywords:
Science & Technology, Technology, Physical Sciences, Acoustics, Engineering, Electrical & Electronic, Physics, Applied, Engineering, Physics
Abstract:
Voltage fluctuations of submicron MOSFETs with gate length L = O.7 μm were investigated. At frequencies up to 10 kHz we observed multistable RTS noise. It depends on the applied drain-source current. The intensity of jumping into the neighbouring stability range is constant in time and depends on the stability level. Power spectra or autocorrelation functions, i.e. the second-order moments of the two-dimensional distributions, provide complete information only for zero-mean stationary Gaussian noise processes. The fluctuations in MOSFETs follow more complicated patterns. The estimation of transition probabilities from noise measurements give additional insight into noise processes. Transition probability distributions were characterized by the entropy as a measure of the degree of uncertainty. The entropy of RTS noise depends on the drain-source current.