Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Applied, Physics, Condensed Matter, Engineering, Materials Science, Physics, STI, PELOX, lifetime, isolation, SUBSTRATE, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 4018 Nanotechnology, 5104 Condensed matter physics

Abstract:

The impact of different isolation schemes on the p-n junction characteristics is compared. From the diode current-voltage behaviour, the silicon generation and recombination lifetime is extracted. It will be shown that the recombination lifetime is higher in the case of shallow trench isolation (STI) than in the case of polysilicon encapsulated local oxidation of silicon (PELOX). The opposite trend is observed for the generation lifetime. These results will be discussed in view of the defects present in the p-well of the diodes, which are studied by other spectroscopic and microscopic techniques.