Author:

Keywords:

Science & Technology, Physical Sciences, Technology, Chemistry, Physical, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Chemistry, Materials Science, Physics, Applied Physics

Abstract:

Ohmic contacts on GaAs were produced by CW laser mixing of Ni/Au/Te layers deposited on n-type GaAs. The measured specific contact resistivities were compared to those of standard processed Ni/AuGe contacts on identically treated GaAs wafers. The surface morphology of the laser processed wafers was far superior to furnace annealed Ni/Au/Te/GaAs wafers. Electrical, RBS and AES measurements were combined to study the correlation between the diffusion of the contact constituents and the electrical behaviour of the metallization scheme. The major reactions occurring at the metal-GaAs interface seem to be similar to the ones occurring during processing of the Ni/AuGe system. Preliminary results on excimer-laser mixed contacts are given. © 1989.