IEEE International Electron Devices Meeting (IEDM), Date: 2019/12/07 - 2019/12/11, Location: San Francisco, CA, USA
2019 IEEE International Electron Devices Meeting (IEDM)
Author:
Keywords:
Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering
Abstract:
We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide. With a hardware-validated compact model we predict the change in hysteresis direction, the steep slope and the transient behaviors observed in our I-V measurements on Hf0.5Zr0.5O2-based planar n-FEFETs. We find that the proposed field-independent propagation is essential in explaining the measured reverse-sweep steep slope and transient current drift. Furthermore, the model suggests that a higher polarization and accordingly a larger I-V hysteresis are induced upon increased trapping. Finally, we show that for hafnia-based FE oxides, reliability engineering of defect band is needed for obtaining steep slope in scaled logic-FEFETs.