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IEEE International Electron Devices Meeting (IEDM), Date: 2019/12/07 - 2019/12/11, Location: San Francisco, CA, USA

Publication date: 2019-12-07
Publisher: IEEE

2019 IEEE International Electron Devices Meeting (IEDM)

Author:

Xiang, Yang
Garcia Bardon, M ; Alam, Md Nur Kutubul ; Thesberg, M ; Kaczer, B ; Roussel, P ; Popovici, MI ; Ragnarsson, L-Å ; Truijen, Brecht ; Verhulst, Anne ; Parvais, B ; Horiguchi, N ; Groeseneken, Guido ; Van Houdt, Jan

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering

Abstract:

We present a kinetics-based analysis of the steep slope operation of ferroelectric (FE) FETs built on (i) a statistical multidomain nucleation-propagation mechanism of FE polarization switching and (ii) charge trapping in the high- K FE oxide. With a hardware-validated compact model we predict the change in hysteresis direction, the steep slope and the transient behaviors observed in our I-V measurements on Hf0.5Zr0.5O2-based planar n-FEFETs. We find that the proposed field-independent propagation is essential in explaining the measured reverse-sweep steep slope and transient current drift. Furthermore, the model suggests that a higher polarization and accordingly a larger I-V hysteresis are induced upon increased trapping. Finally, we show that for hafnia-based FE oxides, reliability engineering of defect band is needed for obtaining steep slope in scaled logic-FEFETs.