Semiconductor International
Publication date:
1995-01-01
Volume:
18
Pages:
75 -
80
Author:
Maex, Karen
Keywords:
Applied Physics
Abstract:
The advantages of using CoSi2 as best silicide for MOS might trigger a switch from TiSi2 to CoSi2 in the near future, although experience with CoSi2 in fab lines has been far less extensive. Among its several performance and process advantages, the process window for CoSi2 formation does not shrink as drastically as for TiSi2. Also, Si consumption for a fixed silicide sheet resistance is smaller.