Advanced Metallization Conference, Date: 2000/10/01 - 2000/10/01, Location: San Diego, CA, USA
Publication date:
2000-01-01
Pages:
595 -
601
ISSN:
1-55899-574-9
Publisher:
MATERIALS RESEARCH SOCIETY
Advanced Metallization Conference 2000 (AMC 2000)
Author:
Donaton, RA
Struyf, Herbert ; Lepage, Muriel ; Coenegrachts, Bart ; Stucchi, Michele ; De Roest, David ; Baklanov, Mikhaïl ; Vanhaelemeersch, Serge ; Maex, Karen ; Gaillard, F ; Xia, LQ ; Lim, TH ; Gotuaco, M ; Yieh, E ; Van Autryve, Luc ; Edelstein, D ; Dixit, G ; Yasuda, Y ; Ohba, T
Keywords:
Science & Technology, Physical Sciences, Technology, Electrochemistry, Metallurgy & Metallurgical Engineering, Materials Science, Coatings & Films, Physics, Condensed Matter, Materials Science, Physics
Abstract:
A new Si-O-C low-k dielectric deposited by CVD has been characterized and integrated into single damascene structures. The film does not have any Si-H bonds in its structure and presented a good thermal stability. The material was successfully integrated into single damascene trenches and good electrical results were obtained. The effect of the stripping process on the interline capacitance was evaluated.