Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures

Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Date: 2004/05/17 - 2004/05/19, Location: Smolenice, Slovakia

Publication date: 2004-05-01

Pages: 41 - 42

Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE)

Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures

Author:

Wang, Wenfei

Zimmerman, L ; Derluyn, J ; Germain, M ; Schreurs, Dominique ; Borghs, Gustaaf