Development and evaluation of a-SiC:H films using a dimethylsilacyclopentane precursor as a low -k Cu capping layer in advanced interconnects

IEEE International Interconnect Technology Conference - IITC, Date: 2013/01/01 - 2013/01/06, Location: Kyoto Japan

Publication date: 2013-01-01

Pages: 105 - 107

Publisher: IEEE

IEEE International Interconnect Technology Conference - IITC

Development and evaluation of a-SiC:H films using a dimethylsilacyclopentane precursor as a low -k Cu capping layer in advanced interconnects

Author:

Van Besien, Els

Wang, Cong ; Verdonck, Patrick ; Singh, Arjun ; Barbarin, Yohan ; Schaekers, Marc ; Baklanov, Mikhaïl ; Van Elshocht, Sven

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering