MoS< /sub>2< //sub> synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

El Kazzi, S; Mortelmans, W; Nuytten, T; Meersschaut, J; Carolan, P; Landeloos, L; Conard, T; Radu, I; Heyns, M; Merckling, C

doi:10.1063/1.5008933

MoS< /sub>2< //sub> synthesis by gas source MBE for transition metal dichalcogenides integration on large scale substrates

Author:

El Kazzi, S

Mortelmans, W ; Nuytten, T ; Meersschaut, J ; Carolan, P ; Landeloos, L ; Conard, T ; Radu, I ; Heyns, M ; Merckling, C

Keywords:

Science & Technology, Physical Sciences, Physics, Applied, Physics, DER-WAALS HETEROSTRUCTURES, FILMS, LAYERS, 01 Mathematical Sciences, 02 Physical Sciences, 09 Engineering, Applied Physics, 40 Engineering, 49 Mathematical sciences, 51 Physical sciences

Abstract:

© 2018 Author(s). We present in this paper the use of Gas Source Molecular Beam Epitaxy for the large-scale growth of transition metal dichalcogenides. Fiber-textured MoS2 co-deposited thin films (down to 1 MLs) are grown on commercially 200 mm wafer size templates where MX2 crystalline layers are achieved at temperatures ranging from RT to 550 °C. Raman Spectroscopy and photoluminescence measurements along with X-Ray Photoelectron Spectroscopy show that a low growth rate is essential for complete Mo sulfurization during MoS2 co-deposition. Finally, cross-section Transmission Electron Microscopy investigations are discussed to highlight the influence of SiO2 and Al2O3 used surfaces on MoS2 deposition.