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17th International Conference on Ion Implantation Technology - IIT 2008., Date: 2008/06/08 - 2008/06/13, Location: Monterey, CA, USA

Publication date: 2008-01-01
Volume: 1066 Pages: 465 - 468
ISSN: 978-0-7354-0597-4
Publisher: AIP Publishing

AIP Conference Proceedings 2008

Author:

Ortolland, C
Horiguchi, N ; Kerner, C ; Chiarella, T ; Eyben, P ; Everaert, J ; Agua Borniquel, J ; Poon, T ; Santhanam, K ; Porshnev, P ; Foad, M ; Schreutelkamp, R ; Absil, P ; Vandervorst, Wilfried ; Felch, S ; Hoffmann, T ; Seebauer, EG ; Kondratenko, YV ; Felch, SB ; Jain, A

Keywords:

Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Multidisciplinary, Physics, Applied, Engineering, Materials Science, Physics, PMOS, BF3, P3i, LDD

Abstract:

© 2008 American Institute of Physics. A study of doping the pMOS Lightly Doped Drain (LDD) by Plasma Immersion Ion Implantation (P3i) with BF3 is presented which demonstrates a better transistor performance compared to standard beam line Ion Implantation (I/I). The benefit of P3i comes from the broad angular distribution of the impinging ions thereby doping the poly-silicon gate sidewall as well. Gate capacitance of short channel devices has been measured and clearly shows this improvement. This model is clearly supported by high resolution 2D-carrier profiles using Scanning Spreading Resistance Microscopy (SSRM) which shows this gate sidewall doping. The broad angular distribution also implies a smaller directional sensitivity (to for instance the detailed gate edge shape) and leads to devices which are perfectly balanced, when Source and Drain electrode are switched.