Transducers, Date: 2009/06/21 - 2009/06/25, Location: Denver, CO, USA
Publication date:
2009-01-01
Pages:
2409 -
2412
ISSN:
9781424441938
Proc. Transducers 2009
Author:
Severi, S
Heck, J ; Chou, T-KA ; Belov, N ; Park, J-S ; Harra II, D ; Jain, A ; Van Hoof, R ; Du Bois., B ; De Coster, J ; Varela, O ; Willegems, M ; Vaes, J ; Jamieson, G ; Haspeslagh, L ; Adams, D ; Rao, V ; Decoutere, S ; Witvrouw, Ann
Abstract:
A poly-SiGe technology enabling a dense array of micro-cantilevers and tips on CMOS is demonstrated. Built from a dual-thickness structural layer, the cantilevers feature a very small initial bending and have a compliant torsional suspension with a stiffness of 3x10-10Nm/rad. Sharp tips are formed in a low-temperature amorphous silicon layer by isotropic plasma etching. An electrical read/write system is formed by connecting the tip to the CMOS with a suspended platinum trace, running on top of the cantilever. ©2009 IEEE.