Reliability insights into low frequency noise in high-mobility transistors

Simoen, E; Romeo, T; Pantisano, L; Luque Rodrjguez, A; Jimenez Tejada, JA; Aoulaiche, M; Veloso, A; Jurczak, M; Krom, R; Mitard, J; Caillat, C; Fazan, P; Crupi, F; Claeys, C

Reliability insights into low frequency noise in high-mobility transistors

Author:

Simoen, E

Romeo, T ; Pantisano, L ; Luque Rodrjguez, A ; Jimenez Tejada, JA ; Aoulaiche, M ; Veloso, A ; Jurczak, M ; Krom, R ; Mitard, J ; Caillat, C ; Fazan, P ; Crupi, F ; Claeys, C

Keywords:

0204 Condensed Matter Physics, 0206 Quantum Physics, Applied Physics

Abstract:

The impact of high-mobility channel materials such as SiGe, Ge, III-V and novel device architectures on the low-frequency noise behavior of 22nm and below CMOS transistors is reviewed. To study the impact on the noise, a comparison is made with planar implant-free quantum well (IFQW) pMOSFETs, exhibiting mainly 1/f noise which is governed by mobility fluctuations, based on the behavior of the normalized current PSD versus the channel current in linear operation. Contrasting low frequency (LF) noise spectra and power spectral density (PSD) are seen for (110) and (100) SiGe p-channel bulk FinFETs. The highest hole mobility is obtained for the (110) based SiGe-channel pMOSFETs, which can be ascribed to the favorable channel orientation compared with (100) silicon substrates. Additional GR noise variability can be induced by device-to-device variations in the threshold voltage, as this will equally modify the quasi-Fermi level with respect to the trap level for the same operation voltages.