Author:

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, Reliability, Bias Temperature Instability, III-V, InGaAs, Quantum Well, STACKS

Abstract:

We present a comprehensive study of Positive Bias Temperature Instability (PBTI) in In0.53Ga0.47As devices with Al2O 3 gate oxide, and with varying thickness of the channel quantum well. We show significant instability of the device electrical parameters induced by electron trapping into a wide distribution of defects in the high-k layer, with energy levels just above the InGaAs conduction band. A significant PBTI dependence on the channel thickness is found and ascribed to quantization effects. We argue that, in order to be relevant for production, the superior transport properties of III-V channels will need to be demonstrated with more stable high-k gate stacks. © 2014 IEEE.