Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling, Date: 2010/04/05 - 2010/04/05, Location: San Francisco, CA USA
Publication date:
2010-01-01
Volume:
1252
Pages:
87 -
91
ISSN:
9781605112299
Publisher:
Materials Research Society.
Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling
Author:
Clarysse, Trudo
Moussa, Alain ; Parmentier, Brigitte ; Eyben, Pierre ; Douhard, Bastien ; Vandervorst, Wilfried ; Nielsen, Peter ; Lin, Rong ; Petersen, Dirch ; Wang, Fei ; Hansen, Ole
Abstract:
The performance of electronic devices relies crucially on the precise tailoring of their carrier distributions. The earlier widely used conventional spreading resistance probe (SRP) suffers from many limitations for profiling sub-50 run silicon based profiles and is also poorly suited for the new high mobility materials being considered today. In this work we therefore investigate into more detail the capabilities of a new approach involving the measurement of the localized sheet resistance along a beveled surface using a micro four-point probe (M4PP) tool (with 1.5 up to 10 μ probe pitch). © 2010 Materials Research Society.