Author:

Keywords:

Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering, 0906 Electrical and Electronic Engineering, Applied Physics, 4009 Electronics, sensors and digital hardware

Abstract:

This letter presents the design, processing, and experimental results obtained on a 5-μm pitch quadrilinear CCD with a single row of sensors, the highest pitch so far reported for CCD line arrays. A conventional three-level polysilicon n-channel BCCD process was used. Isolation between neighboring sensors is performed by the built in depletion region between the photodiodes only, no channel stop or field shield is used for lateral isolation. The CCD shift registers are designed with 3-μm layout rules. A transfer inefficiency of IE-5 and a photoresponse non-uniformity (PRNU) of ±2.5 percent were measured. The MTF at the Nyquist limit (100 lp/mm) for 500-nm illumination is 45 percent. © 1985 IEEE