International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH, Date: 2012/01/23 - 2012/01/04, Location: Boston, MA USA
Publication date:
2012-01-01
ISSN:
1893580199, 9781893580190
International Conference on Compound Semiconductor MANufacturing TECHnology - MANTECH
Author:
Srivastava, Puneet
Cheng, Kai ; Das, Jo ; Van Hove, Marleen ; Leys, Maarten ; Marcon, Denis ; Visalli, Domenica ; Geens, Karen ; Decoutere, Stefaan ; Mertens, Robert ; Borghs, Gustaaf
Abstract:
We present a cost effective approach to realize high breakdown voltage (VBD) of AlGaN/GaN/AlGaN double - heterostructure FETs (DHFETs) having sub-micron thin AlGaN buffer layers on Si (111) substrates by Si removal. We observe that after Si removal, the VBDof buffers and devices are enhanced and independent for different buffer thicknesses (600 nm, 1 μm and 2 μm). The buffers and devices VBDshow electric field strength of ∼2.5 MV/cm and ∼1 MV/cm respectively for all the buffer thicknesses. A device with LGD= 20 μm having a buffer of only 600 nm thick, shows a VBDof over ∼ 2000 V after Si removal. Without Si removal, however, very thick buffer layers are needed to achieve such a high VBD.