Symposium on Analytical Techniques for Semiconductor Materials and Process Characterization IV (ALTECH 2003) held at the 203rd Meeting of the Electrochemical Society, Date: 2003/04/27 - 2003/05/02, Location: Paris, France
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes
Author:
Keywords:
gate dielectrics, oxide, silicon, Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Materials Science, Characterization & Testing, Physics, Applied, Engineering, Materials Science, Physics, GATE DIELECTRICS, 4006 Communications engineering, 4009 Electronics, sensors and digital hardware, 5102 Atomic, molecular and optical physics
Abstract:
ZrO2, HfO2, Al2O3, Zr- and Hf-aluminate thin films, prepared by atomic layer chemical vapor deposition (ALCVD), were characterized by X-ray Fluorescence (XRF) spectrometry. The XRF spectrometer was calibrated with input data of standard samples of ZrO2 and HfO2, obtained by Rutherford backscattering (RBS), and those of Al2O3, obtained by inductively coupled plasma optical emission spectroscopy (ICP-OES). It is found that the deposition rate of ALCVD depends on the surface treatment of Si wafers. An incubation period exists before the deposition becomes stable. ZrO2 and HfO2 show similar deposition behaviors, while Al2O3 grows in a different way. By using alternating pulses of precursors for ZrO2 (or HfO2) and Al2O3, Zr- (or Hf-) aluminates can be deposited. A good composition control of the aluminate layers has been achieved by changing the ratio of the cycle numbers of the two oxides. Zr- and Hf-aluminates are similar in deposition behaviors. It is proven that there is no matrix effect in XRF measurement of the aluminate systems.