Author:

Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Materials Science, Coatings & Films, Physics, Applied, Physics, Condensed Matter, Materials Science, Physics, Ge, Si, growth kinetics, relaxation, silane, germane, MOLECULAR-BEAM EPITAXY, SI GROWTH, KINETICS, SILICON, DEPOSITION, SILANE, 02 Physical Sciences, 09 Engineering, 10 Technology, Applied Physics, 40 Engineering, 51 Physical sciences

Abstract:

The initial growth mode of Si on Ge(100) was studied using SiH4 CVD under a reduced-pressure N2 ambient at 500 and 575 °C. We show that, using the appropriate conditions, 3D growth can be avoided and growth occurs in a layer-by-layer mode. To the authors' knowledge, this had up to now not been reported in literature. The critical thickness for relaxation of the Si film was found to be below 2 nm. Relaxation occurs through the formation of misfit dislocations which preserve the 2D character of the Si film. No convincing evidence for Ge up-diffusion during growth at 500 °C was found. The epitaxial growth of Ge on Ge(100) from the pyrolysis of GeH4 is also studied under H2 ambient in both the kinetic and mass-flow controlled regime. The outstanding features are discussed and some analysis is given. © 2005 Elsevier B.V. All rights reserved.