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Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, 0204 Condensed Matter Physics, 0205 Optical Physics, 0912 Materials Engineering, Applied Physics, 4016 Materials engineering, 5102 Atomic, molecular and optical physics, 5104 Condensed matter physics

Abstract:

The formation of (TixW1-x)Si2/(TixW1-x)N, by rapid thermal processing of TixW1-x on Si in an N2 ambient is investigated. An activation energy of 1.7 eV is obtained for silicide formation. A distinct snow-ploughing of As atoms is observed during silicide formation whereas the interfacial B concentration decreases with increasing silicide formation temperature. The diffusion barrier properties of the (TixW1-x)Si2/(TixWi1-x)N stack in contact with Al is investigated upon post-metal annealing. No interaction between the layers is found for temperatures as high as 475°C after 60 min. The improved thermal stability of the (TixW1-x)N layer in contact with Al is attributed to nitrogen blocking of the grain boundaries. © 1990 Springer-Verlag.