ICDS-18. Proceedings 18th International Conference on Defects in Semiconductors - ; July 23 -28, 1995; Sendai, Japan., Date: 1995/07/23 - 1995/07/28, Location: Leuven Belgium
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4
Author:
Keywords:
Science & Technology, Technology, Materials Science, Multidisciplinary, Materials Science, DLTS, divacancy anneal, oxygen, silicon, irradiation, ELECTRON-IRRADIATED SILICON, DOPED SILICON, DEFECTS, 0306 Physical Chemistry (incl. Structural), 0912 Materials Engineering, Materials, Nanoscience & Nanotechnology, 4016 Materials engineering
Abstract:
Results are reported of a Deep Level Transient Spectroscopy (DLTS) study of the conversion of the divacancy related energy level at Ev+0.19eV, to a level at Ev+0.24eV after anneal at temperatures between 200 and 300°C. In literature both levels have been associated with the donor level of the divacancy in silicon. Diodes processed on p-type Float Zone (FZ) and Czochralski (Cz) silicon wafers with boron concentration of 1.8 and 26×1014cm-3are irradiated with 2 MeV electrons. After isothermal and isochronal anneal experiments the observed defects are electrically characterised. The observed conversion is proposed to be a gradual transformation of the divacancy to a divacancy-oxygen complex.