International Reliability Physics Symposium, Date: 2009/04/01 - 2009/04/01, Location: Monreal, Canada
Publication date:
2009-01-01
Pages:
1014 -
ISSN:
0780388038, 978-1-4244-2888-5
Publisher:
IEEE; USA
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2
Author:
Aoulaiche, Marc
Kaczer, Ben ; Cho, Moonju ; Houssa, Michel ; Degraeve, Robin ; Kauerauf, Thomas ; Akheyar, Amel ; Schram, Tom ; Roussel, Philippe ; Maes, Herman ; Hoffmann, Thomas ; Biesemans, Serge ; Groeseneken, Guido
Keywords:
Science & Technology, Technology, Physical Sciences, Computer Science, Theory & Methods, Engineering, Electrical & Electronic, Physics, Multidisciplinary, Computer Science, Engineering, Physics, NBTI, PBTI, reliability, capped MOSFETs, Al2O3, La2O3
Abstract:
PBTI and NBTI reliability is investigated on La2O3 and Al2O3 capped n and pMOSFETs, respectively. Low Vth devices are achieved using the capping layers without degrading BTI reliability. For the Al2O3 capped pMOSFETs no additional defects related to the capping are observed. The La2O3 capping layer for nMOSFETs induces shallow traps, which however are not critical at operating conditions. ©2009 IEEE.