International Electron Devices Meeting. Technical Digest; 8-11 December 1996; San Francisco, CA, USA., Date: 1996/12/08 - 1996/12/11, Location: Leuven Belgium
Publication date:
1996-01-01
Pages:
343 -
346
ISSN:
0-7803-3394-2
Publisher:
Institute of Electrical and Electronics Engineers
IEDM96
Author:
De Blauwe, Jan
Van Houdt, Jan ; Wellekens, Dirk ; Degraeve, Robin ; Roussel, Philippe ; Haspeslagh, Luc ; Deferm, Ludo ; Groeseneken, Guido ; Maes, Herman
Keywords:
Science & Technology, Technology, Engineering, Electrical & Electronic, Engineering
Abstract:
A new quantitative model is developed that allows an excellent prediction of the disturb behavior of tunnel oxide Flash E2PROM devices after write/erase cycling and provides a well-understood and consistent cell optimization procedure. This model requires as only input a measurement of the oxide quality on capacitors and transistors, and some basic cell characteristics.