Author:

Keywords:

Science & Technology, Physical Sciences, Chemistry, Multidisciplinary, Chemistry, Boron-Nitrogen, Charge Trapping Memory, Polycyclic Aromatic Hydrocarbon, Supramolecular-Doped Polymer, TRANSISTOR MEMORIES, ELEMENTS, C14/19/079#55221587, 03 Chemical Sciences, Organic Chemistry, 34 Chemical sciences

Abstract:

Two wide-band gap U-shaped polycyclic aromatic hydrocarbons with/without boron and nitrogen (BN-) doping (BN-1 and C-1) were synthesized to tune the electronic features to suit the performance requirements for organic field-effect transistor memory (OFET-NVM). The chemical structures were characterized by scanning tunneling microscopy and single-crystal diffraction. Owing to the electron-donor effect of N and the high electron affinity of B, the BN-1-based OFET-NVM displays large ambipolar memory windows and an enhanced charge storage density compared to C-1 and most reported small molecules. A novel supramolecular system formed from BN-1 and PMMA contributes to fabricating uniform films with homogeneous microstructures, which serve as a two-in-one tunnelling dielectric and charge-trapping layer to realize long-term charge retention and reliable endurance. Our results demonstrate that both BN doping and supramolecular engineering are crucial for the charge trapping of OFET-NVM.