Origin of Voids at the SiO< /sub>2< //sub>/SiO< /sub>2< //sub> and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

Nagano, F; Inoue, F; Phommahaxay, A; Peng, L; Chancerel, F; Naser, H; Beyer, G; Uedono, A; Beyne, E; De Gendt, S; Iacovo, S

doi:10.1149/2162-8777/acbe18

Origin of Voids at the SiO< /sub>2< //sub>/SiO< /sub>2< //sub> and SiCN/SiCN Bonding Interface Using Positron Annihilation Spectroscopy and Electron Spin Resonance

Author:

Nagano, F

Inoue, F ; Phommahaxay, A ; Peng, L ; Chancerel, F ; Naser, H ; Beyer, G ; Uedono, A ; Beyne, E ; De Gendt, S ; Iacovo, S

Keywords:

Science & Technology, Technology, Physical Sciences, Materials Science, Multidisciplinary, Physics, Applied, Materials Science, Physics, SICN, 0204 Condensed Matter Physics, 0306 Physical Chemistry (incl. Structural), 3406 Physical chemistry, 5104 Condensed matter physics