Journal of materials research vol:7 issue:5 pages:1093-1095
Al films deposited on Pt layers developed voids after annealing at 250-degrees-C. The amount of Al in the area surrounding the voids increased relative to the as-deposited film. The addition of 1 or 4% Cu to the Al suppressed the void formation and lateral Al migration. The void formation is related to compound formation with the Pt. The addition of Cu to the Al did not modify the Pt2Al3 formation.