Rapid thermal sulphurisation of Cu-rich and Cu-poor Cu-In precursors for the production of CuInS2 layers for photovoltaic applications: a microstructural study
Barcones, B × Romano-Rodriguez, A Alvarez-Garcia, J Calvo-Barrio, L Perez-Rodriguez, A Morante, JR Scheer, R Klenk, R Luck, I Siemer, K Van der Biest, Omer #
Iop publishing ltd
Microscopy of semiconducting materials 2001 issue:169 pages:507-510
For the formation of CuInS2 absorber layers, Cu-rich and Cu-poor Cu-In precursor layers have been deposited on Mo-coated glass slides and annealed in a rapid thermal process at 500degreesC with elemental sulphur. Samples taken at different stages of the sulphurisation process have been analysed by transmission electron microscopy (TEM) and energy dispersive X-ray microanalysis (EDX), in combination with X-ray diffraction (XRD), Raman scattering and Auger electron spectroscopy (AES). The formation of CuInS2 has been detected before reaching 500degreesC and complete sulphurisation occurs at 120s for both samples. Secondary phases are CuS in the Cu-rich case and CuIn5S8 and beta-In2S3 for the Cu-poor sample.