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Title: High speed logic gate using two-photon absorption in silicon waveguides
Authors: Liang, T. K ×
Nunes, L. R
Tsuchiya, M
Abedin, K. S
Miyazaki, T
Van Thourhout, D
Bogaerts, Walter
Dumon, P
Baets, R
Tsang, H. K #
Issue Date: Sep-2006
Publisher: Elsevier science bv
Series Title: Optics communications vol:265 issue:1 pages:171-174
Abstract: The switching speed of conventional silicon-based optical switching devices based on plasma dispersion effect is limited by the lifetime of free carriers which introduce either phase or absorption changes. Here we report an all-optical logic NOR gate which does not rely on free carriers but instead uses two-photon absorption. High speed operation was achieved using pump induced non-degenerate two-photon absorption inside the submicron size silicon wire waveguides. The device required low pulse energy (few pJ) for logic gate operation. (c) 2006 Elsevier B.V. All rights reserved.
URI: 
ISSN: 0030-4018
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Centre for Nuclear Engineering
× corresponding author
# (joint) last author

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