Title: Strain analysis of Si by FEM and energy-filtering CBED
Authors: Okuyama, T ×
Nakayama, M
Tomokiyo, Y
Van der Biest, Omer #
Issue Date: Feb-2002
Publisher: Cambridge univ press
Series Title: Microscopy and microanalysis vol:8 issue:1 pages:11-15
Abstract: Lattice strains around a platelet oxygen precipitate in Si wafer is studied by energy filtering convergent-beam electron diffraction (CBED) and calculations based on the finite element method (FEM). Local lattice strains are measured from CBED patterns obtained with a probe size less than 2 nm in a specimen thicker than 450 nm. Strains measured are compressive along a direction normal to a plate of the precipitate and tensile along a direction parallel to the plate. Two-dimensional stress fields near the precipitate are obtained with FEM computer analyses by fitting the measured strains. It appears that shear stresses are concentrated at the end of the precipitate edge and the maximum shear stress at an interface between the precipitate and the Si-matrix is 1.9 GPa. It is demonstrated that a combination of the energy filtering CBED and FEM is very useful for the study of local strains near interfaces in semiconductor devices, in particular for the study of stress fields that are too steep for application of the conventional CBED technique.
ISSN: 1431-9276
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Physical Metallurgy and Materials Engineering Section (-)
× corresponding author
# (joint) last author

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