Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits
Roelkens, G × Brouckaert, J Taillaert, D Dumon, P Bogaerts, Walter Van Thourhout, D Baets, R Notzel, R Smit, M #
Optical soc amer
Optics express vol:13 issue:25 pages:10102-10108
The integration of optical functionalities on a chip has been a long standing goal in the optical community. Given the call for more integration, Silicon-on-Insulator (SOI) is a material system of great interest. Although mature CMOS technology can be used for the fabrication of passive optical functionality, particular photonic functions like efficient light emission still require III-V semiconductors. We present the technology for heterogeneous integration of III-V semiconductor optical components and SOI passive optical components using benzocyclobutene (BCB) die to wafer bonding. InP/InGaAsP photodetectors on SOI waveguide circuits were fabricated. The developed process is compatible with the fabrication of InP/InGaAsP light emitters on SOI. (c) 2005 Optical Society of America.