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Title: Atomic-force microscopy and infrared-spectroscopy studies of hydrogen baked si surfaces
Authors: Vatel, O. ×
Verhaverbeke, S.
Bender, H.
Caymax, M.
Chollet, F.
Vermeire, B.
Mertens, Paul
Andre, E.
Heyns, Marc #
Issue Date: Oct-1993
Publisher: Japan j applied physics
Series Title: Japanese journal of applied physics part 2-letters vol:32 issue:10B pages:L1489-L1491
Abstract: A H-2 pre-bake at temperatures over 1050-degrees-C is typically used prior to Si epitaxial growth. In this study surface microroughness probed with tapping mode Atomic Force Microscopy (AFM) is correlated with multiple internal reflection infrared spectroscopy measurements for the different steps involved before epitaxy. A novel sample preparation technique was used for the multiple internal reflection set-up. A strong correlation was found between the presence of surface terraces and the IR double monohydride peaks for H-2 annealed Si surfaces. We therefore put forward that the terraces are due to the H-2 pre-bake step. These terraces remain after epitaxial deposition.
URI: 
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Clinical Residents Medicine
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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