Japanese journal of applied physics part 2-letters vol:32 issue:10B pages:L1489-L1491
A H-2 pre-bake at temperatures over 1050-degrees-C is typically used prior to Si epitaxial growth. In this study surface microroughness probed with tapping mode Atomic Force Microscopy (AFM) is correlated with multiple internal reflection infrared spectroscopy measurements for the different steps involved before epitaxy. A novel sample preparation technique was used for the multiple internal reflection set-up. A strong correlation was found between the presence of surface terraces and the IR double monohydride peaks for H-2 annealed Si surfaces. We therefore put forward that the terraces are due to the H-2 pre-bake step. These terraces remain after epitaxial deposition.