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Title: Rinsing and drying effects on heterogeneous substrates
Authors: Fyen, Wim ×
Vos, R.
Devriendt, K.
Meuris, M.
Mertens, P.
Heyns, Marc #
Issue Date: 2001
Publisher: Scitec publications ltd
Series Title: Ultra clean processing of silicon surfaces 2000 vol:76-77 pages:195-198
Abstract: After chemical mechanical polishing (CMP) used in advanced patterning such as e.g. in damascene Cu and Shallow Trench Isolation (STI), the surface consists of 2 (or more) adjacent fields of a different material. It was found that after CMP electrostatic forces can result in a selective deposition of slurry residues on the substrates. Post-CMP cleaning of alumina slurry on two types of heterogeneous surfaces was evaluated using dilute HF. It was found that after HF processing the alumina particles can redeposit on the surface as a result of drying problems. Two major forms of drying residues were identified: 1) residues left at the interface between the two dissimilar materials, ascribed to droplet pinning at the local topography differences and 2) residues in the form of clusters that had deposited on the most hydrophobic substrate material:
ISSN: 1012-0394
Publication status: published
KU Leuven publication type: IT
Appears in Collections:TTO Association
Metallurgy and Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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