Title: Critical parameters for obtaining low particle densities on a si surface in an hf-last process
Authors: Alay, J.I. ×
Verhaverbeke, S.
Vandervorst, Wilfried
Heyns, Marc #
Issue Date: Jan-1993
Publisher: Japan j applied physics
Series Title: Japanese journal of applied physics part 1-regular papers short notes & review papers vol:32 issue:1B pages:358-361
Abstract: A study was made on the relation between particle densities and the (remaining) degree of oxidation of a cleaned (100) Si surface following different HF-treatments (HF, HF/IPA, DI-rinse). A detailed comparison between (X-ray photoelectron spectroscopy) XPS and contact angle measurements of a water droplet with the Si surface shows that the latter method is sensitive to less than 1/10 of a SiO2 monolayer on the (100)Si surface. The results obtained with XPS point out that minute amounts of suboxides (a few percentage of a monolayer) are the dominant cause for particles. On the other hand, HF-dipping time and HF bath temperature are found to be the determinant parameters in an HF-last process. In addition the quality of the rinsing water as well as the initial roughness (Si vs polysilicon) play a major role.
ISSN: 0021-4922
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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