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Title: Removal of submicrometer particles from silicon wafer surfaces using HF-based cleaning mixtures
Authors: Vos, R. ×
Lux, M.
Xu, Kaidong
Fyen, Wim
Kenens, C.
Conard, T.
Mertens, P.
Heyns, Marc
Hatcher, Z.
Hoffman, M. #
Issue Date: Dec-2001
Publisher: Electrochemical soc inc
Series Title: Journal of the electrochemical society vol:148 issue:12 pages:G683-G691
Abstract: We have studied the particle removal efficiency of HF-based cleaning mixtures used to clean wafer surfaces during semiconductor manufacturing. SiO2, Si3N4, and metallic oxide (Al2O3, TiO2) particles can be easily removed from silicon wafers using a HF-based clean, whereas the removal of metallic particles and especially Si and polymeric particles is much more difficult. This is explained in terms of surface hydrophobicity effects. For thermal oxide wafer substrates, a low removal efficiency is observed for the positively charged Si3N4 and Al2O3 particles. This has been explained previously by redeposition of the particles from the carry-over layer during the final rinse [R. Vos, I. Cornelissen, M. Meuris, P. Mertens, and M. Heyns, in Cleaning Technology in Semiconductor Device Manufacturing VI, J. Ruzyllo, T. Hattori, and R. E. Novak, Editors, PV 99-36, p. 461, The Electrochemical Society Proceedings Series, Pennington, NJ (1999)]. Surfactants are found to increase the removal of Si and polymeric particles from silicon substrates. This is attributed to the elimination of hydrophobic attraction forces. In addition, the surfactant is also successful in preventing the particles from redepositing during the final rinse treatment, because during the rinse, both the particle and the substrate have the same surface charge. (C) 2001 The Electrochemical Society.
ISSN: 0013-4651
Publication status: published
KU Leuven publication type: IT
Appears in Collections:TTO Association
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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