Polysilicon-gate structures were manufactured in a cluster tool, using integrated HF vapor etching to remove native oxide. Particle and metallic contamination was measured. The structures were evaluated in terms of break-down yield at 12 MV/cm and charge to break-down. The wet chemical preprocessing appeared to remain an important factor. At the level of contamination measured (range 10(10) at/cm2) the E(bd) yield appeared to be affected by the Cr, Fe and Cu concentration and by the particle level. Reduction of the K and Al concentrations and of the surface haze level is vital to achieve high charge to break-down. With integrated HF vapor etching, higher E(bd) yields can be achieved than with ex situ HF dipping.