Title: Poly-gate structures manufactured in a cluster tool
Authors: Hendriks, M. ×
Deblank, R.
Lindow, E.
Mulder, J.
Granneman, E.
Verhaverbeke, S.
Vandervorst, Wilfried
Heyns, Marc #
Issue Date: 1993
Publisher: Elsevier science bv
Series Title: Applied surface science vol:70-1 pages:619-623
Abstract: Polysilicon-gate structures were manufactured in a cluster tool, using integrated HF vapor etching to remove native oxide. Particle and metallic contamination was measured. The structures were evaluated in terms of break-down yield at 12 MV/cm and charge to break-down. The wet chemical preprocessing appeared to remain an important factor. At the level of contamination measured (range 10(10) at/cm2) the E(bd) yield appeared to be affected by the Cr, Fe and Cu concentration and by the particle level. Reduction of the K and Al concentrations and of the surface haze level is vital to achieve high charge to break-down. With integrated HF vapor etching, higher E(bd) yields can be achieved than with ex situ HF dipping.
ISSN: 0169-4332
Publication status: published
KU Leuven publication type: IT
Appears in Collections:Nuclear and Radiation Physics Section
Department of Materials Engineering - miscellaneous
× corresponding author
# (joint) last author

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